Fabrication, structure and dielectric properties of multilayer heterostructures based on Ba2NdFeNb4O15 and Sr0.6Ba0.4Nb2O6 thin films grown on SrRuO3(001)/MgO(001)

D. V. Stryukov; Ya. Yu. Matyash; V. A. Bobylev; A. V. Nazarenko; A. V. Pavlenko

doi:10.1142/S2010135X24500346

Journal of Advanced Dielectrics, Volume. 15, Issue 3, 2450034(2025)

Fabrication, structure and dielectric properties of multilayer heterostructures based on Ba₂NdFeNb₄O₁₅ and Sr_0.6Ba_0.4Nb₂O₆ thin films grown on SrRuO₃(001)/MgO(001)

D. V. Stryukov¹, Ya. Yu. Matyash¹, V. A. Bobylev², A. V. Nazarenko¹, and A. V. Pavlenko^1,2、***

Author Affiliations

¹Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences, 41 Chekhov Avenue, Rostov-on-Don 344006, Russia

²Institute of Physics, Southern Federal University, 194 Stachki Avenue, Rostov-on-Don 344090, Russia

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By X-ray diffraction and dielectric spectroscopy, the crystal structure, phase composition, and properties of Sr $_{0.6}$ Ba $_{0.4}$ Nb₂O₆/Ba₂NdFeNb₄O $_{15}$ /Sr $_{0.6}$ Ba $_{0.4}$ Nb₂O₆/Ba₂NdFeNb₄O $_{15}$ /SrRuO₃/MgO and Ba₂NdFeNb₄O $_{15}$ /Sr $_{0.6}$ Ba $_{0.4}$ Nb₂O₆/Ba₂NdFeNb₄O $_{15}$ /Sr $_{0.6}$ Ba $_{0.4}$ Nb₂O₆/SrRuO₃/MgO multilayer heterostructures were studied. The heterostructures were manufactured under identical conditions but differing in the layer deposition sequence. It is shown that the orientation domains are formed in each Ba₂NdFeNb₄O $_{15}$ (BNFN) and Sr $_{0.6}$ Ba $_{0.4}$ Nb₂O₆ (SBN) layers. BNFN and SBN layers have tetragonal unit cells with tensile out-of-plane strain and compression in-plane strain. At $T = ? 100 \dots 10 0^{°}$ C both heterostructures are characterized by fairly high relative permittivity values. The reasons for the revealed regularities are discussed.

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D. V. Stryukov, Ya. Yu. Matyash, V. A. Bobylev, A. V. Nazarenko, A. V. Pavlenko. Fabrication, structure and dielectric properties of multilayer heterostructures based on Ba₂NdFeNb₄O₁₅ and Sr_0.6Ba_0.4Nb₂O₆ thin films grown on SrRuO₃(001)/MgO(001)[J]. Journal of Advanced Dielectrics, 2025, 15(3): 2450034

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