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Infrared and Laser Engineering, Volume. 50, Issue 4, 20200231(2021)

Photoelectric characteristics of HgCdTe with Au-doping

Yanfeng Wei, Quanzhi Sun, Juan Zhang, and Ruiyun Sun
Author Affiliations
  • Key Laboratory of Infrared Image Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    Yanfeng Wei, Quanzhi Sun, Juan Zhang, Ruiyun Sun. Photoelectric characteristics of HgCdTe with Au-doping[J]. Infrared and Laser Engineering, 2021, 50(4): 20200231

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    Paper Information

    Category: Infrared technology and application

    Received: Jun. 10, 2020

    Accepted: --

    Published Online: Jul. 30, 2021

    The Author Email:

    DOI:10.3788/IRLA20200231

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology