A 1 200 V/20 A SiC MPS with hexagonal cell realizing low leakage current and high surge current was fabricated through implantation optimization. Under 25 ℃ and 175 ℃ test condition, the results show that its on-state voltage drop (VF) is 1.48 V and 2.03 V, respectively. Owing to optimized implantation and layout design, the maximum electric field at the Schottky contact is only 1.25 MV/cm at 1 200 V. Correspondingly, the leakage current of the device @1 200 V is only 4.3 μA (@25 ℃) and 13.7 μA (@175 ℃), respectively. Moreover, its surge current capability at 25 ℃ and 150 ℃ reaches 258 A and 252 A, which is about 13 times of the rated current.