Ferroelectric topological domain structures exhibit rich physical properties, displaying a wide range of application potential for next-generation nanoelectronic devices. The fundamental issue for the applications of topological devices lies in the precise design and control of ferroelectric topological domain states. Here, the effects of growth conditions on center-type quadrant topological domain configurations in BiFeO₃ (BFO) nanoislands formed through bending-induced bulges were investigated, which were generated by underlying electrode SrRuO₃ (SRO) nanoislands. The experimental results indicate that the formation of central-type topological domains is closely related to the growing conductions of SRO electrode nanoislands, nanoislands dimensions, temperature of BFO epitaxial growth, and BFO deposition thickness. When the lateral size of the electrode nanoislands ranges from 300 to 400 nm, the subsequently grown BFO thin film with nanoislands, and central-type four-quadrant topological domains can be induced by the underlying electrode protrusions. As the height of the electrode nanoislands gradually increases, the domain structure of the ferroelectric nanoislands changes from stripe domains of the thin film to central-type topological domains. However, at the diameter of electrode nanoisland exceeding 500 nm, the central domain transforms into a zigzag domain-wall configuration, demonstrating the important role of flexoelectric effects induced by morphological protrusions in the formation of topological domains. Within certain growth parameters (growth temperature in the range of 690-730 ℃ and BFO thickness in the range of 30-60 nm), increasing the growth temperature facilitates formation of complete four-quadrant central-type topological domains, revealing synergistic interactions among defects, domain wall energy, and flexoelectric effects on the formation of central domain states. This central-type topological domain can also be switched by external field, and simultaneously induce switching between high/low conductive states, laying a foundation for the further construction of polarization topological electronic devices.