PhotoniX, Volume. 5, Issue 1, 5(2024)

Vacuum-ultraviolet (λ < 200 nm) photodetector array

Siqi Zhu1、†, Zhuogeng Lin1、†, Zhao Wang, Lemin Jia, Naiji Zhang, and Wei Zheng*
Author Affiliations
  • State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-Sen University, Shenzhen 518107, China
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    The vacuum-ultraviolet (VUV, 10–200 nm) imaging photodetector (PD) based on the wide bandgap semiconductor (WBGS) can realize a more detailed observation of solar storms than the silicon ones. Here, an 8 × 8 VUV PD array based on the semiconductor AlN with an ultra-wide bandgap is presented, exhibiting the shortest cutoff wavelength (203 nm) reported so far. The PD array with a Pt/AlN/SiC/Ti/Au photovoltaic structure shows an excellent selective response to VUV light, an extremely low dark current density of 2.85 × 10–11 A·cm-2@ -2 V, a responsivity of 0.054 A·W-1@ 0 V and an ultra-short rise time of 13 ns. Also, the clear boundaries and an obvious contrast between light and dark of the VUV image displayed in the imaging measurement indicate the good imaging ability of this PD array, which can be used for the imaging application with high signal-to-noise ratio and high response speed. These results provide rich experience for the development of VUV imaging PDs based on WBGSs both in their fabrication and the practical applications in VUV detection.


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    Siqi Zhu, Zhuogeng Lin, Zhao Wang, Lemin Jia, Naiji Zhang, Wei Zheng. Vacuum-ultraviolet (λ < 200 nm) photodetector array[J]. PhotoniX, 2024, 5(1): 5

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    Paper Information

    Category: Research Articles

    Received: Nov. 22, 2023

    Accepted: Feb. 20, 2024

    Published Online: Apr. 9, 2024

    The Author Email: Zheng Wei (