Chinese Journal of Lasers, Volume. 31, Issue s1, 483(2004)
Investigation of External-Cavity Semiconductor-Laser Emitting Near-Diffraction Limited Beam
A novelty external-cavity is designed to improve beam quality aim at broad area laser diode (BALD). The external-cavity is composed with р?але mirror and blazed diffraction grating. With this kind of setup, a laser beam is obtained with 0.53° far field divergence angle, which corresponding to 1.3 times the diffraction limit, 320 mW output power, spectral line width of 0.02 nm when drive current is 2.7 times threshold current.
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LIU Chong, GE Jian-hong, CHEN Jun, Andreas Hermerschmidt, H. J. Eichler. Investigation of External-Cavity Semiconductor-Laser Emitting Near-Diffraction Limited Beam[J]. Chinese Journal of Lasers, 2004, 31(s1): 483
Category: laser devices and laser physics
Received: --
Accepted: --
Published Online: Jan. 29, 2013
The Author Email: Chong LIU (lch_worm@yahoo.com.cn)
CSTR:32186.14.