Chinese Journal of Lasers, Volume. 31, Issue s1, 483(2004)

Investigation of External-Cavity Semiconductor-Laser Emitting Near-Diffraction Limited Beam

LIU Chong1、*, GE Jian-hong1, CHEN Jun1, Andreas Hermerschmidt2, and H. J. Eichler2
Author Affiliations
  • 1[in Chinese]
  • 2Optisches Institut, Technische Universitaet , D10623, Germany
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    A novelty external-cavity is designed to improve beam quality aim at broad area laser diode (BALD). The external-cavity is composed with р?але mirror and blazed diffraction grating. With this kind of setup, a laser beam is obtained with 0.53° far field divergence angle, which corresponding to 1.3 times the diffraction limit, 320 mW output power, spectral line width of 0.02 nm when drive current is 2.7 times threshold current.

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    LIU Chong, GE Jian-hong, CHEN Jun, Andreas Hermerschmidt, H. J. Eichler. Investigation of External-Cavity Semiconductor-Laser Emitting Near-Diffraction Limited Beam[J]. Chinese Journal of Lasers, 2004, 31(s1): 483

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    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Jan. 29, 2013

    The Author Email: Chong LIU (lch_worm@yahoo.com.cn)

    DOI:

    CSTR:32186.14.

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