Journal of Infrared and Millimeter Waves, Volume. 39, Issue 6, 786(2020)

Diode-end-pumped passively Q-switched Nd:YAP/YVO4 Raman laser at 1.2 μm

Li ZHANG1,2, Hai-Yong ZHU1、*, Ying-Lu SUN2, Yan-Min DUAN2, Zi-Qin QI1, Xiu-Kai RUAN1, and Meng-Yao CHENG2
Author Affiliations
  • 1College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou325035, China
  • 2College of Mathematics and Physics, Wenzhou University, Wenzhou325035, China
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    The output characteristics of passively Q-switched YVO4 Raman laser derived by a diode end-pumped Nd:YAP laser at 1080 nm was investigated. A Cr4+:YAG/YAG composite crystal with an initial transmittance of 85% was used as saturable absorber. The first-Stokes wave output power and pulse characteristics based on a-cut YVO4 crystal with the Raman shift of 890 cm-1 were studied. Under an incident pump power of 9.87 W, the average output power of 0.76W and conversion efficiency of 7.7% were obtained for the first-Stokes wave. The pulse repetition frequency rose from 3.7 to 33.5 kHz as the incident pump power increased from threshold to 9.87 W. The pulse width was about 1.5 ns at the maximum incident pump power. Therefore, the corresponding maximum single pulse energy and peak power were 22.8 μJ and 15.2 kW, respectively.

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    Li ZHANG, Hai-Yong ZHU, Ying-Lu SUN, Yan-Min DUAN, Zi-Qin QI, Xiu-Kai RUAN, Meng-Yao CHENG. Diode-end-pumped passively Q-switched Nd:YAP/YVO4 Raman laser at 1.2 μm[J]. Journal of Infrared and Millimeter Waves, 2020, 39(6): 786

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    Paper Information

    Category: Photoelectric Technology and Application

    Received: Dec. 30, 2019

    Accepted: --

    Published Online: Jan. 20, 2021

    The Author Email: Hai-Yong ZHU (hyzhu.opt@gmail.com)

    DOI:10.11972/j.issn.1001-9014.2020.06.017

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