Chinese Journal of Lasers, Volume. 33, Issue suppl, 49(2006)
13.2 W Continuous Wave Output 1540 nm Semiconductor Laser Array Module
InGaAsP/InP double-step gradient refractive index (GRIN) separated-confinement-heterostructure multi-quantum-well (SCH MQW) structure laser module with an emission wavelength of 1540 nm was grown. Laser bars with a stripe width of 100 μm and a filling factor of 20% was fabricated. The back high-reflection (HR) coating is 3(Si/Al2O3) and the front anti-reflection (AR) coating is Al2O3. The module's continuous wave (CW) output power reaches to 13.2 W at a current of 50 A. The threshold current is 10 A and the central wavelength is 1535.5 nm with a FWHM of 6.5 nm. Characteristic temperature T0 of 68 K is obtained when the temperature of the active region is in the range of 20～50 ℃.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 13.2 W Continuous Wave Output 1540 nm Semiconductor Laser Array Module[J]. Chinese Journal of Lasers, 2006, 33(suppl): 49
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