Chinese Optics Letters, Volume. 8, Issue 7, 683(2010)
Photoluminescence study of the annihilation process of donor-bound excitons in ZnO: observation of quantum mechanical interference
We report a photoluminescence observation of the coupling of donor-bound excitons and longitudinal optical phonons in high-quality ZnO crystals at 5 K. The first-order phonon Stockes line of donor-bound excitons exhibits a distinct asymmetric line shape with a clear dip at its higher energy side, suggesting that quantum mechanical interference occurs during the annihilation of donor-bound excitons. The donor binding energy is determined to be 49.3 meV from spectral featural.
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Shenlei Shi, Tengchao Huang, "Photoluminescence study of the annihilation process of donor-bound excitons in ZnO: observation of quantum mechanical interference," Chin. Opt. Lett. 8, 683 (2010)
Received: Dec. 30, 2009
Accepted: --
Published Online: Jul. 19, 2010
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