Temperature distributions and thermal deformations of silicon, sapphire, and calcium fluoride window substrates at 1.315 μm are calculated in terms of Green-function methods. The calculated results show that under conditions of irradiating of 10 kW intense laser with Gaussian shape, the maximum temperature rise in Al2O3, CaF2, Si, and SiO2 substrates is 5.6 ℃, 6.0 ℃, 35.1 ℃, and 26.6 ℃, respectively. The amount of thermal distortions in Аl2O3, CaF2, Si, and SiO2 substrates is 0.28 μm, 0.99 μm, 0.40 μm, and 0.14 μm, respectively.