In this paper, the polarization luminescence characteristics of the near-band-edge peak and Fe3+ related emission peaks(4T1(G)-6A1(S)) of the non-polar surfaces including a-plane {1120} and m-plane {1100} of Fe-doped GaN crystal were studied by low-temperature photoluminescence(PL) measurement. The results show that the optical anisotropy of a-plane and m-plane are similar. When the linearly polarized electric-field vector E is parallel to the c-direction ［0001］ (E∥c), the intensity of GaN near-band-edge peak is the lowest, and the intensity of Fe3+ zero-phonon line (1.299 eV) is the strongest. The degree of polarization of Fe3+ zero-phonon line is greater than that of near-band-edge peak. The degree of polarization of near-band-edge peak of a-plane is 26%, while the degree of polarization of Fe3+ zero-phonon line reaches up to 55% and 58% of a-plane and m-plane GaN, respectively. The polarization characteristics of Fe3+ fine peak and the additional lines are further measured at 5 K. The results show that, except for one weak peak, other peaks are consistent with the polarization characteristics of Fe3+ zero-phonon line. This study is helpful to expand the application of Fe-doped GaN crystal in the field of novel optical and electrical devices.