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Chinese Journal of Lasers, Volume. 14, Issue 9, 544(1987)

Si-photocell with ultra-shallow junction by GILD and its characteristics

Zhou Zhengzhuo1, Li Ding1, Qiu Mingxin1, and Zhou Yuliang2
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  • 2[in Chinese]
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    By means of GILD(gas immersion laser doping)on the surfaces of n-Si samples with BBra vapor as material, Si-photo-cells doped with boron have been manufactured with the maximum doping concentration of 1.2x 1021 B+/cm3 near the surface, the junction depth of 0.08/am at 1017 B+/cms and the conversion efficiency of about 9.5% without antireflection coatings.

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    Zhou Zhengzhuo, Li Ding, Qiu Mingxin, Zhou Yuliang. Si-photocell with ultra-shallow junction by GILD and its characteristics[J]. Chinese Journal of Lasers, 1987, 14(9): 544

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    Paper Information

    Category: laser devices and laser physics

    Received: Jul. 2, 1986

    Accepted: --

    Published Online: Aug. 10, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology