Chinese Journal of Lasers, Volume. 33, Issue 12, 1593(2006)

Laser Diode Pumped Actively Q-Switched Nd:GdVO4Self-Stimulated Raman Laser

[in Chinese]1,2、*, [in Chinese]1, [in Chinese]1,2, [in Chinese]1,2, and [in Chinese]1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less

    Generation of compact and efficient self-stimulated Raman pulses by a laser diode (LD) pumped actively Q-switched c-cut Nd:GdVO4 laser is demonstrated. At 1.8 W incident pump power, the self-stimulated Raman laser produces stable 19 ns pulses at a Stokes wavelength of 1176 nm with 10 μJ pulse energy at 10 kHz repetition rate. The threshold of the self-stimulated Raman laser is 510 mW, the conversion efficiency from the diode pump to the Stokes is 5.6%. Experimental results reveal that efficient self-stimulated Raman conversion frequency can be achieved with a c-cut Nd:GdVO4 crystal and actively Q-switched.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Diode Pumped Actively Q-Switched Nd:GdVO4Self-Stimulated Raman Laser[J]. Chinese Journal of Lasers, 2006, 33(12): 1593

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Laser physics

    Received: Dec. 29, 2005

    Accepted: --

    Published Online: Dec. 30, 2006

    The Author Email: (lthqiao@sohu.com)

    DOI:

    Topics