It is the most difficult point of high brightness high power semiconductor lasers to improve horizontal directional beam quality and performance characteristic of broad area laser diodes (LDs). According to diffraction losses characteristic of those different modes, lasing light propagates in the passive waveguide of broad area semiconductor laser. And AlxNy dielectric film stress is used to prepare no-absorption passive waveguide by changing base band gap of semiconductor materials. Combining both the principle and the technology, broad area semiconductor lasers with no-absorption mode filter (passive waveguide) have been designed whose average peak power output increases by 49% for new structural device, vertical divergence angle is up to 20.6°, and horizontal divergence angle is up to 3.3°. It is less than 0.085% of aging speed per thousand of the LDs after testing of 3500 h aging.