Gallium nitride, as the third generation material of lighting devices has greatly improved, compared with the first generation of silicon and the second generation of gallium arsenide performance. Gallium nitride-based Micro-LED devices are also getting more and more attention. However, the emission efficiency of the traditional c-plane growth of LEDs is not high in practical applications, due to quantum confined stark effect, green gap, carrier transport or other problems. Nonpolar or semipolar LED has the advantages of non-polarized electric field, stronger internal quantum efficiency, and more probability of electron and hole recombination. Therefore, the research and application of nonpolar and semipolar Micro-LED devices have aroused great interest. This paper reviews the research status of nonpolar and semipolar Micro-LED devices. Firstly, the advantages of nonpolar and semipolar gallium nitride materials are introduced from four aspects: quantum confined Stark effect, green gap, carrier transport and efficiency droop. Then, three technologies of chip shaping, pattern etching and array are introduced for solving the problems of defect dislocation, low efficiency of optical extraction and realizing full color display under different current density. Finally, the prospect of Micro-LED as the next generation display leader is given. It is hoped that it will be helpful in the next research for Micro-LED.