APPLIED LASER, Volume. 39, Issue 5, 892(2019)

Design of 1 210nm High-Power Semiconductor Laser Therapeutic Equipment

Bi Jinzi*, Wang Caixia, Cai Yiluo, and Zhao Ziru
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  • [in Chinese]
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    This paper introduces the design of optics, constant current source system and protective circuit and constant temperature control unit of a high-power semiconductor laser therapeutic equipment. It uses a fiber coupled 980 nm with maximum power output of 10 W as effective light source, 635 nm semiconductor laser as aiming beam. The functions such as operation mode, output power, pulse width and pulse cycle could be easily set through the LCD touch screen. It has a very good prospect of application in cosmetic dermatology.

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    Bi Jinzi, Wang Caixia, Cai Yiluo, Zhao Ziru. Design of 1 210nm High-Power Semiconductor Laser Therapeutic Equipment[J]. APPLIED LASER, 2019, 39(5): 892

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    Paper Information

    Received: Aug. 8, 2019

    Accepted: --

    Published Online: Dec. 5, 2019

    The Author Email: Jinzi Bi (bjz@laser.net.cn)

    DOI:10.14128/j.cnki.al.20193905.892

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