Ferroelectric tunneling devices have attracted much attention in the field of non-volatile memory research due to their low power consumption, fast response, and stable data read/write performance. To further improve the performance of ferroelectric memory, a 7 nm-thick BaTiO₃ ferroelectric tunneling device was fabricated on a flexible mica substrate using pulsed laser deposition. The growth conditions of BaTiO₃ were optimized, and its electrical properties were investigated. The results show that the flexible 7 nm BaTiO₃ ferroelectric tunneling junction exhibits distinct resistive switching behavior. The I‒V test results display typical hysteresis characteristics, and the I‒V curve reveals clear switching behavior under different voltage conditions, with a read voltage of only 0.5 V. In the R‒V test, the resistance change of the BaTiO₃ tunneling junction was measured under a square wave voltage with a 10 ms pulse width, demonstrating good resistance hysteresis and a distinct “memory window”. In the retention test, current and resistance remained stable for 300 seconds, indicating excellent retention performance. Different conduction mechanism models were used to fit the leakage current, which was primarily governed by ohmic conduction, space charge-limited conduction, and Schotty emission. These results confirm the feasibility of the flexible BaTiO₃ memristor and support the development of high-performance flexible ferroelectric tunneling devices.