Laser Technology, Volume. 48, Issue 6, 856(2024)

Multi-spectral phototransistor based on 2-D materials/group Ⅳ bulk materials heterojunctions

LIN Guangyang, CAI Xinwei, LI Shuo, WANG Jianyuan, and LI Cheng*
Author Affiliations
  • Department of Physics, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
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    Multi-spectral detection had significant applications in many fields of industry. High-performance broadband photodetectors integrating multi-band responses became one of the important research directions of optical imaging technology. Current research progress of broadband photodetectors was briefly introduced. The prospects of 2-D/3-D mix-dimensional van der Waals (VDW) heterojunctions in the development of broadband photodetectors were elaborated. Some progress of broadband phototransistors based on 2-D transition metal dichalcogenides/3-D group Ⅳ materials VDW heterojunctions by the research group, including traditional NPN-type, PNP-type phototransistors and emerging phototransistors with Schottky junction collectors were reviewed. Ultimately, the applications of these phototransistors were prospected.

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    LIN Guangyang, CAI Xinwei, LI Shuo, WANG Jianyuan, LI Cheng. Multi-spectral phototransistor based on 2-D materials/group Ⅳ bulk materials heterojunctions[J]. Laser Technology, 2024, 48(6): 856

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    Paper Information

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    Received: Jan. 24, 2024

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email: LI Cheng (lich@xmu.edu.cn)

    DOI:10.7510/jgjs.issn.1001-3806.2024.06.011

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