Journal of Synthetic Crystals, Volume. 54, Issue 7, 1238(2025)
Additive-Assisted Growth of CsPbBr3 Single Crystals and Its γ-Ray Detection Performance
CsPbBr3 single crystals (SCs) exhibit exceptional properties such as high atomic number, large carrier mobility-lifetime product, high resistivity, and excellent X/γ-ray absorption, making them promising materials for semiconductor radiation detectors. While solution-based methods enable cost-effective growth of CsPbBr3 SCs, the resulting crystals often show a preferred orientation, rod-like shape and fast growth rates that lead to defects such as twinning, which hinder device fabrication. In this study, cetyltrimethylammonium bromide (CTAB) was introduced as an additive during inverse temperature crystallization to enhance crystal growth (it primarily decelerates the growth rate along the [002] direction, thus suppressing the preferential orientation of CsPbBr3 SCs) and quality. The obtained CsPbBr3 single crystal exhibits rocking curve full width at half maximum (FWHM) of 0.08°, a high resistivity of 8.14×109 Ω·cm, an enhanced carrier mobility-lifetime product of 6.44×10-3 cm2·V-1, and a low trap density of 2.07×1010 cm-3, indicating its high crystalline quality and electrical properties. Additionally, a γ-ray detector fabricated from the CsPbBr3 SC achieved high performance, with an energy resolution of 10.25% for 59.5 keV γ-photons from a 241Am isotope. These results highlight the potential of additive-assisted growth for producing high-quality CsPbBr3 SCs for advanced radiation detection applications.
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Ran CHEN, Xiao ZHAO, Gang MENG, Volodymyr GNATYUK, Youbao NI, Shimao WANG. Additive-Assisted Growth of CsPbBr3 Single Crystals and Its γ-Ray Detection Performance[J]. Journal of Synthetic Crystals, 2025, 54(7): 1238
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Received: Feb. 5, 2025
Accepted: --
Published Online: Aug. 28, 2025
The Author Email: Shimao WANG (shmwang@aiofm.ac.cn)