Through the discussion of tandem amorphous silicon (a-Si∶H) film solar cell processing, suitable laser and process parameters are given. Character of scribing area which scribed by 40 kHz, 1.2 m/s scribing speed, 16 W 1064 nm laser, 4 W single way power and 3 W 532 nm laser, 0.75 W single way power with 4-way light splitter focus system are discussed. Factors which cause heat-affected zone and lead to the decrease of efficiency are analyzed. Key process parameters which affect scribing line obviously and which needed to be accurately controlled are given.