Based on a 0.18 μm CMOS process, a wideband low noise amplifier(LNA)applied in direct RF sampling (DRFS) receivers at VHF was designed. In order to solve the problems of large area and difficult integration caused by using inductor at VHF, an inductorless structure was adopted, so the circuit had the function of single input and double output. In order to reduce noise, a noise cancellation structure based on cascode negative feedback was adopted. The post-simulation results showed that the whole circuit’s input matching parameter S11 was less than -15 dB, the output matching parameter S22 was less than -12.6 dB, the gain was 25.22~25.39 dB, and the noise factor was less than 1.927 dB within 30~300 MHz. The Layout size was 204 μm×365 μm.