In this paper, the low-temperature Raman and photoluminescence (PL) spectroscopy were employed to study the crystallization degree, stress distribution of the pure diamond film. Combined with electron irradiation and rapid annealing, the impurity defect structure of the pure diamond film was studied. Raman spectroscopy analysis shows that the stress distributions in edge and surface of the film are higher than in interior, which may be ascribed to the diamond growth mechanism, physical cutting and polishing damage to the films. The zero phonon lines in PL spectra show obvious temperature dependent, and the spectra peaks redshift, intensity reduction and low-temperature splitting with increase of temperature were explained by Jahn-Teller effect and electron-phonon coupling theory. Low temperature PL spectra observed distinct NV defects in the film after electron irradiation and 700 ℃ annealing，which indicate that the nitrogen mainly existed in the lattice with a form of substitution impurities.