Chinese Journal of Lasers, Volume. 39, Issue 4, 406001(2012)

Effect of Pulse Energy of Femtosecond Laser on the Formation of Spikes on the Silicon Surface in the Ambient Gas of SF6

Wen Ya*, Peng Yan, Zhang Dongsheng, Chen Hongyan, Chen Lin, and Zhu Yiming
Author Affiliations
  • [in Chinese]
  • show less

    The evolution of spikes formed on silicon surface by irradiating femtosecond laser pulses in SF6 as the increase of incident pulse energy is experimentally investigated. The spike height increases with the increase of pulse energy at first and then decreases with the pulse energy continuously increasing. The increase of spike height is all due to the material ejection at the initial stage. While the high energy can not penetrate into the deep layer of silicon completely during the initial several hundreds of laser pulses, more and more energy accumulates on the topmost layer and the silicon surface is maintained in the molten state, which hinders the formation of spike structure. This leads the decrease of the effective number of pulses interacting with silicon, together with the decrease of the spike height.

    Tools

    Get Citation

    Copy Citation Text

    Wen Ya, Peng Yan, Zhang Dongsheng, Chen Hongyan, Chen Lin, Zhu Yiming. Effect of Pulse Energy of Femtosecond Laser on the Formation of Spikes on the Silicon Surface in the Ambient Gas of SF6[J]. Chinese Journal of Lasers, 2012, 39(4): 406001

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: materials and thin films

    Received: Nov. 15, 2011

    Accepted: --

    Published Online: Mar. 17, 2012

    The Author Email: Wen Ya (cuniicun@163.com)

    DOI:10.3788/cjl201239.0406001

    Topics