Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm

D. Bimberg; C. Meuer; M. Lammlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein

doi:10.3788/COL20080610.0724

Chinese Optics Letters, Volume. 6, Issue 10, 724(2008)

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm

D. Bimberg^*, C. Meuer, M. Lammlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, and G. Eisenstein

Institut für Festkorperphysik, Technische Universitat Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany2 Innolume GmbH, Konrad-Adenauer-Allee 11, 40263 Dortmund, Germany3 Electrical Engineering Department, Technion, Haifa 32000, Israel

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The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.

Keywords

190.4720 250.5590 250.5980

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D. Bimberg, C. Meuer, M. Lammlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, G. Eisenstein, "Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm," Chin. Opt. Lett. 6, 724 (2008)

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Paper Information

Received: May. 16, 2008

Accepted: --

Published Online: Dec. 4, 2008

The Author Email: D. Bimberg (Bimberg@physik.tu-berlin.de)

DOI:10.3788/COL20080610.0724

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology