SnO2 thin films with good orientation are prepared on a glass substrate by radio frequence (RF) reactive sputtering. The phases of the thin films before and after annealing are analyzed by X-ray diffraction (XRD) spectroscopy, and the surface morphologies of the thin films before and after annealing are analyzed by atomic force microscopy (AFM). The result shows that the crystalline quality of the films markedly improved, the grains grow a little, and the orientation is more consistent after annealing in the air at 400℃ for 60 min. After modular multi-grating spectrometer measurement, the average transmittance in the air is found to be 80%. By the scanning electron microscopy (SEM), the energy spectrum shows that the ratio of Sn and O is close to 1:2.