Chinese Optics Letters, Volume. 3, Issue 0s, 62(2005)

Experimental study on the depth of electric field punching through into the absorption layer of APD

[in Chinese]1... [in Chinese]2, [in Chinese]3, [in Chinese]1, [in Chinese]1, [in Chinese]3, [in Chinese]2 and [in Chinese]1 |Show fewer author(s)
Author Affiliations
  • 1School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631
  • 2Department of Applied Physics, South China University of Technology, Guangzhou 510641
  • 3College of Applied Physics, Guangdong University of Technology, Guangzhou 510090
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    Dark-current-voltage curves and photon-current-voltage curves were measured by a passive quenched circuit so that the voltage applied to the avalanche photodiode can be much higher than breakdown voltage in study on the depth of punch through. The photo-current-voltage curve indicated clearly the punch-through voltage while the dark current-voltage curve is insensitive to the punch through. Furthermore, the avalanches initiated by the photo-generated carrier at a voltage lower than that from the thermo-generated carriers and explained based on the different distribution of the carriers.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], "Experimental study on the depth of electric field punching through into the absorption layer of APD," Chin. Opt. Lett. 3, 62 (2005)

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    Received: --

    Accepted: --

    Published Online: Mar. 5, 2007

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