Laser Technology, Volume. 48, Issue 6, 884(2024)

Research on application properties of semiconductor optoelectronic material B2S3 in ion battery

ABDURYIM Elyas1, CHEN Changcheng1、*, GAO Linsong1, YUN Xiongfei1, and LU Pengfei2
Author Affiliations
  • 1Department of Physics, School of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China
  • 2School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China
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    In order to meet the requirements of new renewable energy technologies for electrode materials with appropriate structural, electronic, and mechanical properties, first principles calculations were used to study the electrochemical properties and potential applications of B2S3 semiconductor optoelectronic materials with dynamic, mechanical, and thermal stability. The research results indicate that as an anode material, B2S3 monolayer has suitable storage capacity (Li: 227.2 mAh/g; Na: 340.8 mAh/g), ultra-low diffusion barrier (Li: 0.23 eV; Na: 0.14 eV), and low average open circuit voltage (Li: 0.515 eV; Na: 0.162 eV). It has relatively small lattice changes (Li: 2.5%; Na: 2.1%) during charge and discharge processes. Under different concentrations of lithium/sodium ion adsorption, the metal properties of B2S3 monolayer remain unchanged, exhibiting good conductivity and battery stability. This study indicates that B2S3 semiconductor optoelectronic material is an attractive anode candidate material for lithium/sodium ion batteries. The excellent properties of B2S3 monolayer can further explore its application as an anode material for lithium/sodium ion batteries.

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    ABDURYIM Elyas, CHEN Changcheng, GAO Linsong, YUN Xiongfei, LU Pengfei. Research on application properties of semiconductor optoelectronic material B2S3 in ion battery[J]. Laser Technology, 2024, 48(6): 884

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    Paper Information

    Category:

    Received: Jan. 16, 2024

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email: CHEN Changcheng (chenchangcheng@xauat.edu.cn)

    DOI:10.7510/jgjs.issn.1001-3806.2024.06.014

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