Journal of Optoelectronics · Laser, Volume. 34, Issue 9, 967(2023)

Thermal emission recombination process of trapped carriers in polycrystalline MAPbBr3 films

TAO Tingting1, SHU Jingting1, FENG Bohao1, XUE Yuan1, WU Feng2, and DANG Wei1、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    The trap inside the organic-inorganic lead halide perovskite (OLHP) semiconductor materials is crucial factor for its photoelectric properties.In order to understand the effect of trap on carrier recombination process in polycrystalline methylamine bromide perovskite ((Methylammonium)PbBr3,MAPbBr3) films,time resolved microwave conductivity (TRMC) technology is applied.The experimental results show that both free carrier recombination and trapped carrier thermally emission recombination occur to polycrystalline MAPbBr3 films.The energy level related to trapped carrier thermal emission recombination isolate from continuous band, and their central energy depth and distribution width are 0.6 eV and 89.2 meV,respectively.Excitation wavelength varying TRMC experiments are also used to differentiate shallow trapped electrons and electrons in conduction band.The experiments confirm that shallow trapped electrons are more likely to transition to deep trapped states compared with electrons on coduction band.

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    TAO Tingting, SHU Jingting, FENG Bohao, XUE Yuan, WU Feng, DANG Wei. Thermal emission recombination process of trapped carriers in polycrystalline MAPbBr3 films[J]. Journal of Optoelectronics · Laser, 2023, 34(9): 967

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    Paper Information

    Received: Jun. 30, 2022

    Accepted: --

    Published Online: Sep. 25, 2024

    The Author Email: DANG Wei (dangwei@hbu.edu.cn)

    DOI:10.16136/j.joel.2023.09.0469

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