Clutter suppression is a significant challenge for high-performance surface acoustic wave（SAW）resonators. To suppress the clutter occurring in high-frequency broadband resonators，we excited the S₀ mode surface acoustic wave on a X-40°Y-LiNbO₃（LN）/SiO₂/Ta₂O₅/SiO₂/Ta₂O₅/SiO₂/Si substrate structure and obtained a high-frequency broadband resonator. Subsequently，an in-depth analysis of clutter suppression was conducted. Two novel IDT design schemes were proposed，simulated，and fabricated for verification. The simulation and fabrication results showed that the proposed three-busbar IDT structure provided good clutter suppression for high-frequency broadband resonators while maintaining the quality factor（Q）to values comparable to those of normal type resonators. The suppression effect of different finger shapes on clutter in the S₀ mode of the resonator was also tested through fabrication.