A 2 μm Waveband InGaAsSb/AlGaAsSb Wide Stripe MQW Diode Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 25, Issue 12, 1069(1998)

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

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Abstract Get PDF(in Chinese)

The performance of a wide stripe InGaAsSb/AlGaAsSb MQW diode laser grown by MBE is reported. Output pulse power of the laser diode at room temperature is 83 mW, the threshold current is 250 mA, and the typical peak wavelength is about 2.00 μm.

Keywords

MBE growth quantum well material mid infared semiconductor laser

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A 2 μm Waveband InGaAsSb/AlGaAsSb Wide Stripe MQW Diode Laser[J]. Chinese Journal of Lasers, 1998, 25(12): 1069

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Paper Information

Category: Laser physics

Received: Jan. 7, 1998

Accepted: --

Published Online: Oct. 18, 2006

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DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology