High Power Laser and Particle Beams, Volume. 36, Issue 11, 115004(2024)

Preliminary study on laser initiated multi-gate semiconductor switch

Hongwei Liu1, Lingyun Wang1,2, Chongbiao Luan1, Jianqiang Yuan1、*, Weiping Xie1, Jie Yang1, Yang He1, Jiabin Fu1, and Le Xu1
Author Affiliations
  • 1Key Laboratory of Pulsed Power Technology, Institute of Fluid Physics, CAEP, Mianyang 621900, China
  • 2College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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    Solid state pulse power sources are widely used in the field of pulse power technology and have become a new research hotspot. Among them, high-power solid-state switching devices are the core of solid-state pulse power sources. This article reports a new type of laser initiated multi gate semiconductor switch (LIMS), which has two working modes: photo induced linear mode and field induced gain mode. It solves the problem of low current rise rate in traditional electronic control devices and achieves high current rise rate of device. Experimental tests in photo induced linear mode showed a current rise rate of 454 kA/μs. The switch has been preliminarily applied in fields such as detonator initiation and electromagnetic pulse simulation.

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    Hongwei Liu, Lingyun Wang, Chongbiao Luan, Jianqiang Yuan, Weiping Xie, Jie Yang, Yang He, Jiabin Fu, Le Xu. Preliminary study on laser initiated multi-gate semiconductor switch[J]. High Power Laser and Particle Beams, 2024, 36(11): 115004

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    Paper Information

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    Received: Sep. 15, 2024

    Accepted: Oct. 27, 2024

    Published Online: Jan. 8, 2025

    The Author Email: Jianqiang Yuan (j.q.yuan@163.com)

    DOI:10.11884/HPLPB202436.240331

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