INFRARED, Volume. 41, Issue 4, 8(2020)

Study on Solid-liquid Interface Control Technology for InSb Crystal Growth

Chao ZHAO*, Bing XU, Tao DONG, Jiang-gao LIU, Bo CHENG, Yuan-rui CHEN, Zhi-qiang PENG, Li-jun HE, and Zhen-xing LI
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    In the aspect of solid-liquid interface control, there are many studies on mature semiconductors such as Si, but few studies on indium antimonide(InSb)materials. The effects of crystal pulling speed, rotation speed and crucible rotation speed on the shape of the solid-liquid interface during the growth of the InSb crystal in equal diameter segment were simulated and the actual crystal growth experiment was carried out. The results show that these three growth parameters have a certain effect on the smooth control of the solid-liquid interface shape. A stable solid-liquid interface control method is obtained, which lays the foundation for subsequent InSb materials with lower dislocation density and more uniform radial electrical parameter distribution.


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    ZHAO Chao, XU Bing, DONG Tao, LIU Jiang-gao, CHENG Bo, CHEN Yuan-rui, PENG Zhi-qiang, HE Li-jun, LI Zhen-xing. Study on Solid-liquid Interface Control Technology for InSb Crystal Growth[J]. INFRARED, 2020, 41(4): 8

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    Paper Information


    Received: Apr. 4, 2020

    Accepted: --

    Published Online: Jan. 27, 2021

    The Author Email: Chao ZHAO (