Based on a 2 μm InGaP/GaAs HBT process, a high efficiency, high linear power amplifier for LTE terminal was designed and implemented. Analog predistortion and phase compensator were used to suppress the amplitude distortion and phase distortion, so as to achieve high linearity. The second harmonic terminal capacitor was used to change the working mode of the circuit, and the overlapping power loss of voltage and current in time domain was reduced, so the additional power efficiency was improved. The results showed that the gain of the power amplifier was greater than 295 dB and the input return loss was less than -132 dB at 34 V power supply and 28 V bias voltage within 815~915 MHz frequency range. In the case of 10 MHz LTE input modulation signal and 28 dBm back output power, the power added efficiency was 39%~41%, the ACLR1 was less than -381 dBc, and the ACLR2 was less than -448 dBc.