Silicon photonic switches that use phase change materials offer solutions to the high power consumption and large size challenges faced by traditional optical switch technologies. However, the high absorption properties of conventional optical phase change materials impose limitations on the integration scale of optical switch arrays. Due to its reversible phase transitions between single-crystal states and low structural entropy, In₂Se₃ is promising for advancing high-speed, stable, and low-power optical switch technology. This study presents a non-volatile photonic switch based on In₂Se₃ and silicon waveguides that is composed of a directional coupler structure formed by multiple silicon waveguides and a single heterogeneously integrated Si-In₂Se₃ waveguide. Utilizing the non-volatile phase transition characteristics between α-In₂Se₃ and β-In₂Se₃, the device can switch the output between the cross and bar ports of the directional coupler, thus enabling a waveguide-type switch that does not require continuous power supply. Simulation results show that at 1550 nm, the optical switch achieves insertion losses of less than 0.86 dB at both the cross and bar ports, with a channel crosstalk of more than -20.39 dB. The proposed structure is expected to inspire technological developments in fields such as optical communications and photonic information processing.