?12 mm×35 mm CsSnBr₃ crystals doped with 1% Sn（Ⅳ） and undoped crystals were successfully prepared by Bridgman method， and the solution grown CsSnBr₃ crystal was used as the control. The phase， electrical and optical properties of all crystal samples were studied. CsSnBr₃ crystals belong to the cubic system with space group Pm3m. The band gap of undoped CsSnBr₃ is 1.79 eV. The carrier concentration and mobility of CsSnBr₃ crystals can be significantly improved by doping 1%Sn（Ⅳ）， with the carrier concentration increasing from 6.1×10¹⁶ cm^-3 to 1.0×10¹⁸ cm^-3， and the mobility from 5.7 cm2·V^-1·s^-1 to 36 cm2·V^-1·s^-1. The mobility reaches the equivalent level of the solution method crystal. CsSnBr₃ has a photoluminescence （PL） emission peak at about 680 nm. Sn（Ⅳ） can also inhibit the non-radiative recombination process of carriers， reducing the non-radiative recombination probability and improving the PL intensity， while the PL lifetime remains unaffected. Calculation results indicate that the minority carrier diffusion length of the CsSnBr₃ crystal with 1% Sn（Ⅳ） is nearly three times as long as that of the undoped crystal. CsSnBr₃ crystals exhibit tolerance to stoichiometric ratio deviations. Within the deviation range of ±1%， the crystal performance is not significantly affected， and the excess components are separated from the crystal surface in specific forms. It is concluded that a small amount of Sn（Ⅳ） can actually increase the conductivity of tin perovskite materials and may protect grain boundaries， weakening the scattering and the non-radiative recombination of carriers at grain boundaries. The discovery of stoichiometric tolerance provides flexibility in raw material ratio for the preparation of tin perovskite materials， deepens the understanding of the growth mechanism of CsSnBr₃ crystal， and reduces the technical difficulty.