In order to improve the low light extraction efficiency(LEE) of graphene UV light-emitting diode (LED) due to the high absorption of indium tin oxide (ITO) thin layer to UV light, the ITO micro nano structure (rectangle and triangle) was used as the buffer layer of graphene UV LED. The ITO micro nano structure was optimized and graphene UV LED was theoretically analyzed by the finite difference time domain method. The results show that when the thickness, duty cycle and period of rectangular micro nano structure are 160nm and 0.7,220nm respectively, the LEE of UV LED can reach 10.668% under single graphene. The use of rectangular micro structure as the insertion layer is 45.06% higher than that of ITO thin layer as the insertion layer, while when the triangular micro nano structure is in the optimal parameters, the LEE of graphene UV LED is only 6.64%, significantly lower than that of ITO thin layer. This study can provide a theoretical basis for the subsequent preparation of high-power UV LED.