In order to investigate the process law and material removal mechanism of 266nm nanosecond solid-state laser drilling on CH film, the single-pulse and multi-pulse drilling experiments were carried out by adopting the single-factor control variable method. The removal mechanism of CH film material by 266nm nanosecond solid-state laser was analyzed. The data of the influence of laser pulse energy and pulse number on the diameter and depth of micropores were obtained. The results show that: when the CH film material is drilled by a single pulse with energy of 0.014mJ, the micropore with the smallest diameter and depth is obtained; when the laser pulse energy is 0.326mJ, the micropore with the largest diameter and depth is obtained. Both the diameter and depth of a micropore increases with the increase of laser pulse energy. When the CH film material is drilled by multiple pulses with low pulse energy , the single pulse ablation rate of laser on CH film is about 0.56μm/pulse. When the laser pulse energy is high, the single pulse ablation rate of laser on CH film is about 1μm/pulse. The diameter and depth of a micropore increase with the increase of laser pulse number. When 266nm nanosecond solid-state laser is used as the drilling source on the CH film, the micropores are regular in shape and uniform in size. There are no residues and debris around the micropores, and there is no heat affected zone at the edge. It can be inferred that the material removal mechanism is mainly “photochemical removal”. The research has certain reference significance for the application of 266nm nanosecond solid-state laser processing CH film.