This paper addresses the challenge of low output power in domestically produced mid-infrared semiconductor single-bar lasers that currently limits their industrial scalability. Initially, four semiconductor target laser modules are spatially combined to increase the total output power of the quantum cascade laser in the mid-infrared band. Subsequently, through optical component design and fine-tuning of light paths, beam shaping techniques effectively resolve the degradation of beam quality during the four-channel spatial combining process, while simultaneously optimizing the beam quality post-combination. Additionally, in the drive control and temperature control module, the current drive control circuit and temperature control circuit accurately and stably control the voltage, current and temperature of the input laser, so that the quantum cascade laser can achieve stable and high-power output at room temperature. The design of quantum cascade laser with high output power at room temperature, minimal divergence angle, narrow line width and wide tunability is of great social and military importance, as well as having a wide range of practical prospects.