YbF3 is proposed as a substitute for ThF4 in anti-reflection or reflection coatings in the infrared (IR) range. In this letter, we study on the properties of the YbF3 thin film deposited with different deposition parameters, and find the deposition rate of YbF3 has a large effect on the substrate particles deposition both on number and area. Moreover, we find the deposition temperature is a main factor of element content. In the end, we produce an anti-reflection coating on Ge substrate, and its average transmission reaches 99.5%, which can satisfy the practical requirement.