Ⅲ-Ⅵ group InSe crystal is a very important compound semiconductor material, which is widely used in the fields of high-performance nano electronic devices, infrared light detection, photoelectric devices and flexible electronics. The development of In-Se phase diagram is briefly reviewed. InSe has incongruent melting characteristics that can be obtained by peritectic reaction from the quasi stoichiometric or non-stoichiometric solution, and the mole ratio of In/Se has an important influence on the productivity of InSe. In order to prepare InSe crystal, several techniques have been adopted in the past, such as vertical Bridgman method, Czochralski method, horizonal gradient freeze method, low temperature liquid phase method and vapor transfer method. In order to better understand the development of InSe crystal growth, this review summarizes the process principle, technical points, production of these techniques, and discsuses their advantages and disadvantages. It is shown that the vertical Bridgman method has become a mainstream method for preparing high quality and large size InSe crystals by virtue of the simple apparatus and feasible operation. The horizonal gradient freeze method is a special way for growing ε-InSe crystal, which would play a role of supplement to the vertical Bridgman method in the research and application of new material in the future.