PhotoniX, Volume. 1, Issue 1, 4(2020)

Integrated transmitter devices on InP exploiting electro-absorption modulation

M. Baier*... N. Grote, M. Moehrle, A. Sigmund, F. M. Soares, M. Theurer and U. Troppenz |Show fewer author(s)
Author Affiliations
  • Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587 Berlin, Germany
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    InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple transmitter PIC comprising a single-mode laser diode and an electro-absorption modulator. Using a so-called identical-layer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally integrating an optical amplifier section modulated optical output power of > 10 dBm has been achieved. Multi-level amplitude modulation was successfully demonstrated. Extended EML chips designed for wavelength-division and space-division multiplexing, respectively, will be presented. For dual-polarization transmission a novel EML related transmitter as well as a corresponding receiver PIC have been introduced. The latter devices were made on a generic PIC platform that is available for open-access foundry service.

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    M. Baier, N. Grote, M. Moehrle, A. Sigmund, F. M. Soares, M. Theurer, U. Troppenz. Integrated transmitter devices on InP exploiting electro-absorption modulation[J]. PhotoniX, 2020, 1(1): 4

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    Paper Information

    Category: Research Articles

    Received: Oct. 10, 2019

    Accepted: Dec. 29, 2019

    Published Online: Jul. 10, 2023

    The Author Email: Baier M. (moritz.baier@hhi.fraunhofer.de)

    DOI:10.1186/s43074-020-0003-4

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