The large size and high quality inorganic metal halide perovskite Cs3Bi2I9(15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P63/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs3Bi2I9 is 5.07 g/cm3 and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs3Bi2I9/Au is constructed to measure the carrier ability of Cs3Bi2I9 crystal by the time of flight (TOF) technique. The electron mobility of Cs3Bi2I9 crystal is obtained approximately of 4.33 cm2·V-1·s-1. The carrier mobility life product (μτ) of Cs3Bi2I9 crystal is obtained ~8.21×10-5 cm2·V-1 by the Hecht equation, with the energy resolution of 39% at 500 V.