Zero-time delay amony picosecond light pulses can be determined by using time-delay dependent energy-transfer in GaAs chips. This new method has been proved to b e convenient and accurate in the determination of zero-time delay among light pulses at small intersection angles.

The coordinate transformations are made for the refractive indices ellipsoid equa tion of biaxial cryatals. The formulations of refractive indices of optical waves whose velocity is slower or faster are derived and the polarized directions of coresponding optical are given.

Experimental results of transvorse mode-selection are given by using pre-pulse Q-switching on Nd: glass laser. Compared with small hole mode-selection, it has more energy output.

The energy and density of electrons in argon hollow cathodo discharge (HCD) supplied with pulsed current are measured by a cylindrical double probe system. The measured energy and density of electron are 7.1-17.5eV and 1.2×l013-4.1×l013cm respectively, when the de preionization current is 80mA, the pressure range is 0.3-0.6 Torr and the pulse voltage range varies from 1.4 to 2.2 kV.

A method is discussed to measure the third susceptibility X(3) by degenerate four wave mixing (DFWM) in the absorping medium, the reason is found out for the saturation of the reflectivity of DFWM at high pumping intensity, and some data of x(3) in the absorbing media were given.

The course of logic operations of carry lookahead adder for binary number is introduced into optical computation. The carry lookahead by optical parallel processing is proposed. The parallel logic operations of PD-LED are realized by using encod edsignals with space array. The logic operations of PD-LED are studied. and experiment of optical parallel carry lookahead adder for many bits is carried out, with satisfactory results.

Optical realization of simultaneous OR and XOR operations between two images is proposed. The optical element whioh can perform the above-mentioned logical operations is made by means of CGH. Experimental results are presented and some discussions are given.

Characteristics of sampled format optical disk are analysed briefly, the influence of different wobble flags on the tracking error signal is discussed and a wobble flag structure capable of obtaining the maximum tracking servo signal gain is put forward.

The ray propagating and paraxial imaging characteristics of a GRIN fiber lens with constant refractive-index surfaces of revolution paraboloids are studied. The exact analytical "solutions for the ray paths are obtained from diffirential equation on light ray. The equivalent focal length and the formulas for determing the principal planes, focal planes are derived and the Gaussian imaging formulas are also given.

The kinetics of XeCl excimer lasers pumped by distributed circuits of both the transmission line and Blumlein line are analysed. By solving the Boltzmann equation, energy balance equation, electric circuit equation and laser oscillator equation, numerical results are obtained and are compared with the experimental results.

Complete active mode-locking have been achieved with a F-P etalon in a GaAs/GaAlAs semiconductor laser with external cavity and 13.5ps pulses without substructures at 925MHz repetition frequency have been obtained.

An isober heating is used to derive Hora's empirical formula for fusion gains, then a self similarity solution and theealculation are presented. The numerical results obtained agree essentially with the analytical solution on the whole.

Optical second-harmonic-generation study on the adsorption of oxygen on a polycrystalline Ag in an UHV chamber is reported. It demonstrates that oxygen is only adsorbed in molecular state at low Ag temperature. Heating up to 175K leads to dissociation of the oxygen mole cules, resulting in an atomic oxygen adsorbtion. At 330K, Ag surface is covered completely by the atomic oxygen.

The reason for cracking of the metal surface melted by laser was analyzed theoretically. The ways of preventing the metal surface melted by laser from cracking were pointed out and its feasibility was verified experimentally.

Experimental results are presented for the first time for sputtered AIN film which is a protector and AR film on the facet of semiconductor light-emitting devices. The technical conditions for obtaing sputtered AIN film and its properties are given.