Chinese Journal of Lasers, Volume. 17, Issue 11, 650(1990)

Complete mode-locked semiconductor lasers

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    Complete active mode-locking have been achieved with a F-P etalon in a GaAs/GaAlAs semiconductor laser with external cavity and 13.5ps pulses without substructures at 925MHz repetition frequency have been obtained.

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    [in Chinese], [in Chinese]. Complete mode-locked semiconductor lasers[J]. Chinese Journal of Lasers, 1990, 17(11): 650

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    Paper Information

    Category: Laser physics

    Received: Nov. 30, 1988

    Accepted: --

    Published Online: Nov. 12, 2007

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