Chinese Journal of Lasers, Volume. 17, Issue 11, 650(1990)
Complete mode-locked semiconductor lasers
Complete active mode-locking have been achieved with a F-P etalon in a GaAs/GaAlAs semiconductor laser with external cavity and 13.5ps pulses without substructures at 925MHz repetition frequency have been obtained.
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[in Chinese], [in Chinese]. Complete mode-locked semiconductor lasers[J]. Chinese Journal of Lasers, 1990, 17(11): 650