Journal of Semiconductors
Editors-in-Chief
Shushen Li
CN
11-5781/TN
ISSN
1674-4926
Impact Factor
/
Google Scholar h5-index
Frequency
Monthly issues
Xinfa Zhu, Weishuai Duan, Xiancheng Meng, Xiyu Jia, Yonghui Zhang, Pengyu Zhou, Mengjun Wang, Hongxing Zheng, and Chao Fan
Apr. 24, 2024Journal of Semiconductors
DOI:10.1088/1674-4926/45/3/032703
Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity
Tingting Shi, Yuanbin Fan, Zhengyu Yan, Lai Zhou, Yang Ji, and Zhiliang Yuan
Apr. 24, 2024Journal of Semiconductors
DOI:10.1088/1674-4926/45/3/032702
GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits
Yong Sun, Wei Zhang, Shuang Han, Ran An, Xin-Sheng Tang, Xin-Lei Yu, Xiu-Juan Miao, Xin-Jun Ma, Xianglian, Pei-Fang Li, Cui-Lan Zhao, Zhao-Hua Ding, and Jing-Lin Xiao
Apr. 24, 2024Journal of Semiconductors
DOI:10.1088/1674-4926/45/3/032701
Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells
Jin Sui, Jiaxiang Chen, Haolan Qu, Yu Zhang, Xing Lu, and Xinbo Zou
Apr. 24, 2024Journal of Semiconductors
DOI:10.1088/1674-4926/45/3/032503
Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
Chao Feng, Xinyue Dai, Qimeng Jiang, Sen Huang, Jie Fan, Xinhua Wang, and Xinyu Liu
Apr. 24, 2024Journal of Semiconductors
DOI:10.1088/1674-4926/45/3/032502
A novel one-time-programmable memory unit based on Schottky-type p-GaN diode