In order to achieve high sensitivity detection, infrared detectors need to be optimized. Based on the Silvaco device simulation tool, the photoelectric characteristics of p-i-n InP/In0.53Ga0.47As/In0.53Ga0.47As photodetector is analyzed. The effects of absorption concentration and mesa width on dark current and junction capacitance in the structure are simulated. The results show that as the doping concentration of the absorption layer gradually increases, the dark current of the device gradually decreases, and the junction capacitance gradually increases. When the mesa width becomes narrower, the dark current of the device decreases, and the junction capacitance becomes smaller. Finally, the effect of light intensity and frequency on the device junction capacitance is studied. At low light intensity, the device junction capacitance is basically unchanged. When the light intensity increases to 1 W/cm2, the device junction capacitance increases rapidly. The device junction capacitance increases with frequency decreasing. The peak is caused by defect levels.

A closed-tube mercury-rich annealing was performed on the HgCdTe material grown by the liquid phase epitaxy(LPE)method. The influence of different heat treatment time and heat treatment temperature on the electrical properties of HgCdTe material was studied. The mercury-rich heat treatment of HgCdTe material can effectively reduce the defect size, density and dislocation density in the material, and can complete the transformation of the material from p--type to n--type. In the process, the low temperature annealing has a great influence on the electrical properties of HgCdTe materials. It is found that with the continuous increase of the annealing time, the carrier concentration of HgCdTe materials will be increased significantly. When the low-temperature heat treatment temperature changes in the range of 210--250 ℃, keeping the low-temperature heat treatment time unchanged, the carrier concentration of the HgCdTe material after the heat treatment will fluctuate within a certain range without significant changes. Through the I--V curve test and the final component test of the HgCdTe device, it is found that the HgCdTe chip with carrier concentration in the range of 1×1013--1×1014 cm-3 after heat treatment has good test results.

The dewar activation process will cause the temperature of the detector chip to overshoot and cause the chip to fail. The temperature distribution in the process of dewar activation is analyzed by simulation. The main heat transfer path of the detector chip with temperature rise and overshoot during dewar activation is studied.A scheme of getter baffle is proposed, which can reduce the maximum surface temperature of the detector chip from 105 ℃ to 85 ℃,and solve the problem of temperature overshoot in the activation process.

The influence of the parameters of the primary ion beam on the SIMS test is introduced. It is found that the choice of ion source is determined by the analysis element, the primary beam energy determines the depth resolution, the incident angle affects the sputtering yield, and the primary ion beam current density affects the sputtering rate. Therefore, in the SIMS test, the corresponding parameters need to be adjusted according to the different analysis purposes to obtain better resolution.

With the rapid development of science and technology, information collection and fusion tend to be diversified and complicated. A single sensor can no longer meet the demand. Therefore, multi-sensor information fusion technology begins to be widely used in all walks of life, and improves the accuracy and integrity of information processing. The multi-sensor information fusion technology is introduced from the aspects of concept, structure and classification as well as the research and practical application of key algorithms in this paper, and the development trend and future prospect of this technology are summarized.

Single-photon detection using gated quenching technology is easier to achieve high-speed detection and has a longer service life. The width of the gated signal is directly related to the detection noise and detection efficiency. Based on the characteristics of high-speed D flip-flop and high-precision programmable delay chip, a pulse signal generation method with adjustable frequency and gated signal width is proposed. The experimental circuit is designed by studying the characteristics of the chip, and the experimental results are displayed and discussed. The results show that the method can generate a gated signal with a minimum gate width of 1 ns and a maximum frequency of 100 MHz.

Based on Erfle lens structure, a traditional refractive eyepiece which can be used in the helmet display system is designed. On this basis, the diffraction surface is added, and the refractive and diffractive eyepiece is optimized. The basic structural parameters of the two systems are the same. The exit pupil distance is 27 mm and the diameter of the exit pupil is 8 mm. Compared with the traditional refractive structure, the total length of the refractive and diffractive eyepiece is reduced by 11%, the weight is reduced by 23%, and the distortion is reduced by 59.45%. Considering the influence of bandwidth integral average diffraction efficiency of diffractive optical elements on the system′s modulation transfer function(MTF), the MTF of the field-of-view on the axis and the minimum MTF of the refractive and diffractive helmet eyepiece are higher than 0.68 and 0.28 respectively at the spatial frequency of 40 lp/mm, which can meet the design requirements. It can be used in the virtual reality helmet display system.

In order to realize the high efficiency and harmlessness of textile fiber detection, the rapid detection method is provided to textile enterprises and market regulatory authority. In this paper, 281 samples of cotton/spandex blend are taken as the research object, and the influence of sample colors and fabric structures is analyzed. The near-infrared quantitative model of fiber content in cotton/spandex blended fabric is established by the partial least square method. To verify the accuracy of the model, the prediction is made based on 23 cotton/spandex samples. The predicted results are paired with the standard method SN/T 0464-2003 in t-test, and the conclusion that there are no significant differences between the two methods is obtained. The near-infrared method has been converted into the industry standard of inspection and quarantine and proved to be effective in practical application.

Aiming at the problem that the spectral data of prediction model are not fully utilized in near infrared spectroscopy, a new method which can make full use of spectral data and effectively predict the proportion of silk content is proposed. The proportion of silk content in 145 samples of 5 types and the corresponding spectral data of all protein bases are taken as the research objects. The samples are divided into calibration and verification sets respectively. The partial least squares regression method and the partial least squares regression multi-model method are respectively used to establish the prediction model, and the prediction effects of the two methods are compared and observed. Taking the silk samples of type 2 as an example, 13 principal components are selected and the two models are compared. It is found that the correlation coefficient of multi-PLSR increases from 0.594 to 0.9784, and the average relative error decreases from 0.4866 to 0.1384.The experimental results show that the new method makes full use of the information in the spectral data and improves the accuracy of the prediction model of silk content proportion, which provides a new thought for the establishment of the near infrared spectrum prediction model.