Bulletin of the Chinese Ceramic Society, Volume. 42, Issue 11, 4178(2023)

Simulation of Electronic Structure and Magnetism Properties of S Vacancy and Tc-Doped Monolayer MoS2

FU Sinian* and ZHU Ruihua
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    References(12)

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    [5] [5] MATSUYAMA KAOKI RMIURA Ket al. Metallic transport in monolayer and multilayer molybdenum disulfides by molecular surface charge transfer doping[J]. ACS Applied Materials & Interfaces202214(6): 8163-8170.

    [6] [6] ZHOU WZOU X LNAJMAEI Set al. Intrinsic structural defects in monolayer molybdenum disulfide[J]. Nano Letters201313(6): 2615-2622.

    [7] [7] TORNATZKY HKAULITZ A MMAULTZSCH J. Resonance profiles of valley polarization in single-layer MoS2 and MoSe2[J]. Physical Review Letters2018121(16): 167401.

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    FU Sinian, ZHU Ruihua. Simulation of Electronic Structure and Magnetism Properties of S Vacancy and Tc-Doped Monolayer MoS2[J]. Bulletin of the Chinese Ceramic Society, 2023, 42(11): 4178

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    Paper Information

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    Received: Jul. 17, 2023

    Accepted: --

    Published Online: Dec. 11, 2023

    The Author Email: Sinian FU (fusinian6334569@126.com)

    DOI:

    CSTR:32186.14.

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