[3] [3] MA X Y, LI Z. Advances in high power semiconductor diode lasers ［J］. SPIE, 2007, 6824:682402-1- 682402-16.

[6] [6] XIA R, LARKINS E C, HARRISON I, et al.. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars ［J］. IEEE Photon. Technol. Lett, 2002,14(7):893-895.

[7] [7] MARTIN P, LANDESMAN J P, MARTIN E, et al.. Micro-photoluminescene mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes ［J］.SPIE, 2000,3945:308-316.

[8] [8] TOMM J W, MLLER R, BRWOLFF A, et al.. Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices ［J］. Appl. Phys. Lett, 1998,73(26):3908-3910.

[9] [9] TOMM J W, MLLER R, BRWOLFF A, et al.. Spectroscopic measurement of packaging-induced strains in quantum well laser diodes ［J］. J. Appl. Phys, 1999,86(3):1196-1201.

[10] [10] TOMM J W, B RWOLFF A, ELSAESSER T, et al.. Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers ［J］. Appl. Phys. Lett, 2000,77(5):747-749.

[11] [11] TOMM J W, GERHARDT A, ELSAESSER T, et al.. Simultaneous quantification of strain and defects in high-power diode laser devices ［J］. Appl. Phys. Lett, 2002,81(17):3269-3271.

[12] [12] TOMM J W, GERHARDT A, LORENZEN D, et al.. Diode laser testing by taking advantage of its photoelectric properties ［J］. SPIE, 2002,4648:9-21.

[13] [13] GERHARDT A, WEIL F, QUOCTRAN T, et al.. Device deformation during low-frequency pulsed operation of high-power diode bars ［J］. Appl. Phys. Lett, 2004,84(18):3525-3527.

[14] [14] TOMM J W, QUOCTRAN T, ZIEGLER M, et al.. Degradation behavior and thermal properties of red (650 nm) high-power diode single emitters and laser bars ［J］. SPIE, 2007,6456:645606-1-645606-7.

[15] [15] TOMM J W, GERHARDT A, M LLER R, et al.. Spatially resolved spectroscopic strain measurements on high-power laser diode bar ［J］. J. Appl. Phys, 2003,93(3):1354-1362.