Microelectronics, Volume. 53, Issue 3, 512(2023)

Study on Effect of Surface Doping Concentration on Low-Voltage TVS

LIANG Tao1...2, XIAO Tian1,2, LIU Yong1,2, PEI Ying1,2, HU Jingying2 and RAN Wei2 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(2)

    [7] [7] OBREJA V V N. Capabilities and limitations of semiconductor surge voltage suppressors [C] // Proceedings of the International Semiconductor Conference. Sinaia, Romania. 1999, 1: 169-172.

    [9] [9] KING Y C, YU B, POHLNAM J, et al. Punch through transient voltage suppressor for low-voltage electronics [J]. IEEE Electron Device Letters, 1995, 16(7): 303-305.

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    LIANG Tao, XIAO Tian, LIU Yong, PEI Ying, HU Jingying, RAN Wei. Study on Effect of Surface Doping Concentration on Low-Voltage TVS[J]. Microelectronics, 2023, 53(3): 512

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    Paper Information

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    Received: Jul. 8, 2022

    Accepted: --

    Published Online: Jan. 3, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220326

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