Fig. 1. (a) Schematic diagram of the structure of the angled cavity laser diodes; (b) GH shift and mode angle of the fundamental lateral mode within the angled cavity

Fig. 2. Coupling efficiency of the fundamental lateral mode at the front facet and near-field distribution at the fundamental lateral mode critical etch depth D_c,0 (inset)

Fig. 3. Effect of effective refractive index N_eff,Et (etching region) on GH shift (a) and cavity length (b) in angled cavity

Fig. 4. Effect of tilt angle θ and ridge width W on GH shift (a) and cavity length (b) of the angled cavity under the fundamental lateral mode critical etching depth D_c,0

Fig. 5. (a) Etching depth and leakage loss of the fundamental, third-order, and fifth-order lateral modes at different effective refractive index N_eff,Et (etching region); (b) Calculated resonator patterns of different lateral modes in the angled cavity at the critical etching depth D_c,0